Steady State Temperature Study on RF LDMOS with Structure Modification
نویسندگان
چکیده
منابع مشابه
Reliability Study of Power Rf Ldmos Devices under Thermal Stress
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, airair test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures ∆T). The performances shift for some critical electrical parameters...
متن کاملReliability study of power RF LDMOS device under thermal stress
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, airair test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures ∆T). The performances shift for some critical electrical parameters...
متن کاملA 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications
A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear wit...
متن کاملCharacteristics of Rf-driven Steady State Tokamak Power Reactors
The use of lower hybrid waves for current drive in steady state tokamak power reactors is studied. Constraints imposed by rf wave propagation are considered in detail. The effect of decoupling of electron and ion temperatures is studied and is found to enhance significantly the ratio of fusion power to dissipated power. Tradeoffs for parameters of rf driven steady state reactors are determined....
متن کاملAnalysis of a Novel Strained Silicon RF LDMOS
In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Engineering
سال: 2012
ISSN: 1947-3931,1947-394X
DOI: 10.4236/eng.2012.47049